| PART |
Description |
Maker |
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32005BG |
32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K3N6VU1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K3N6C3000E-DC |
32M-Bit (4Mx8) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
| AM29LV320DB90EI |
EEPROM,FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| CMS3216LAX-75XX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| K1S321615M K1S321615M-E K1S321615M-EE10 |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
Samsung semiconductor
|
